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IRFI820G

Part No IRFI820G
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 500V 2.1A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 2.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 24nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 25V
Power Dissipation (Maximum) 30W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187666-IRFI820G
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI820G CAD Model

Description

The Vishay IRFI820G is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Package: TO-220-3
  • Vds - Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 2.1A
  • Rds On (Maximum) @ Id, Vgs: 3Ohm @ 1.3A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 24nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 360pF @ 25V
  • Supply and Demand: Limited
  • Package Quantity: 1,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2520 $62.6000
115+ $1.0268 $118.0820
175+ $0.9956 $174.2300
240+ $0.9633 $231.1920
315+ $0.9309 $293.2335
415+ $0.8351 $346.5665
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,750 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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