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IRFIBF30GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFIBF30GPBF

Part No IRFIBF30GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 1.9A TO220FP
Datasheet
IRFIBF30GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 3.7 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 120106-IRFIBF30GPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIBF30GPBF CAD Model

Description

The IRFIBF30GPBF from Vishay is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 900V and a Continuous Drain Current @ 25°C of 1.9A (Tc).

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 78nC @ 10V
  • Package: TO-220-3 with an Isolated Tab
  • Win Source Part Number: 120106

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $2.1012 $73.5420
80+ $1.7241 $137.9280
120+ $1.6703 $200.4360
165+ $1.6164 $266.7060
210+ $1.5626 $328.1460
280+ $1.4009 $392.2520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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