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IRFP22N50APBF

Part No IRFP22N50APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 500V 22A TO-247AC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3450pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 277W (Tc)
Maximum Rds On at Id,Vgs 230 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 017626-IRFP22N50APBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Family Name IRFP22N50A
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China, Israel, Mexico
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFP22N50APBF CAD Model

Description

The IRFP22N50APBF is an N-channel MOSFET with a maximum power dissipation of 277W (Tc) and a continuous drain current of 22A (Tc).

  • Power Dissipation: 277W (Tc)
  • Continuous Drain Current: 22A (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Mounting Type: Through Hole
  • Case/Dimension: TO-247-3
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $2.9781 $50.6277
41+ $2.4436 $100.1876
64+ $2.3672 $151.5008
88+ $2.2909 $201.5992
113+ $2.2145 $250.2385
152+ $1.9854 $301.7808
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,011 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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