The Vishay Siliconix MOSFET is a high-performance N-Channel transistor that is designed for use in discrete semiconductor products.

• It features a maximum drain-source breakdown voltage of 500V, a continuous drain current of 20A, and a maximum on-resistance of 270mOhm @ 12A and 10V.
• The transistor is packaged in a TO-247-3 package and has a power dissipation of 280W.
• The gate-source voltage is ±30V, and the input capacitance is 3600pF @ 25V.
• The MOSFET is suitable for use in a wide range of applications, including power supplies, motor control, and lighting systems.
• The supply and demand status is balanced, and the MSL level is 1 (unlimited).