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IRFP460NPBF

Part No IRFP460NPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A TO-247AC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 124nC @ 10V
Max Input Capacitance 3540pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 280W (Tc)
Maximum Rds On at Id,Vgs 240 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1046998-IRFP460NPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP460NPBF CAD Model

Description

The Vishay MOSFET is a high-quality component that is perfect for use in discrete semiconductor products.

  • Power Dissipation: 280W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Channel Type: N-Channel
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 240 mOhm @ 12A, 10V
  • Mounting Style: Through Hole
  • Case/Package: TO-247-3
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 124nC @ 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Product Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Applications: Power supplies, motor control, and lighting.

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