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Same model may have multiple batches, images only for reference.
IRFR120TRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR120TRRPBF

Part No IRFR120TRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 7.7A DPAK
Datasheet
IRFR120TRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047020-IRFR120TRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR120TRRPBF CAD Model

Description

The IRFR120TRRPBF is an N-Channel MOSFET from Vishay.

  • Category: Discrete semiconductor product
  • Power Dissipation: 2.5W (Ta) and 42W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 7.7A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 360pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 270 mOhm @ 4.6A, 10V
  • Package: D-Pak package with a dimension of TO-252-3, DPak (2 Leads + Tab), SC-63

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