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IRFR210TR

Part No IRFR210TR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 2.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 093951-IRFR210TR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR210TR CAD Model

Description

The Vishay 093951-IRFR210TR is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2.5W (Ta), 25W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 2.6A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 8.2nC @ 10V
  • Maximum Input Capacitance: 140pF @ 25V
  • Maximum Rds on at Id, Vgs: 1.5 Ohm @ 1.6A, 10V
  • Package: D-Pak package
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Temperature Range: -55°C to 150°C (TJ)
  • Usage: Commonly used in the industry with high popularity

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5200 $52.0000
235+ $0.4267 $100.2745
365+ $0.4133 $150.8545
500+ $0.4000 $200.0000
650+ $0.3867 $251.3550
870+ $0.3467 $301.6290
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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