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Same model may have multiple batches, images only for reference.
IRFR210TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR210TRLPBF

Part No IRFR210TRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 2.6A DPAK
Datasheet
IRFR210TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 131610-IRFR210TRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR210TRLPBF CAD Model

Description

The Vishay IRFR210TRLPBF is an N-channel MOSFET that can handle a power dissipation of 2.5W (Ta) and 25W (Tc).

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 2.6A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Package: D-Pak case
  • Mounting: SMD technology
  • Application: ideal for use in applications such as DC-DC converters, power supplies, and motor control

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Quantity Unit Price Ext. Price
80+ $0.7375 $59.0000
195+ $0.6051 $117.9945
300+ $0.5863 $175.8900
410+ $0.5673 $232.5930
530+ $0.5484 $290.6520
705+ $0.4917 $346.6485
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Availability: 7,300 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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