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Same model may have multiple batches, images only for reference.
IRFR9120TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9120TRLPBF

Part No IRFR9120TRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 5.6A DPAK
Datasheet
IRFR9120TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 390pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 110509-IRFR9120TRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9120TRLPBF CAD Model

Description

The Vishay IRFR9120TRLPBF is a P-channel MOSFET transistor with a maximum power dissipation of 2.5W.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 5.6A at 25°C
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Max Gate Charge: 18nC at 10V
  • Max Rds On: 600 mOhm at 3.4A and 10V
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: suitable for SMD (SMT) mounting
  • Temperature Range: -55°C to 150°C (TJ)
  • Family: fixed inductors
  • Application: power management and signal transmission

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Quantity Unit Price Ext. Price
5+ $10.1866 $50.9330
12+ $8.3583 $100.2996
19+ $8.0971 $153.8449
26+ $7.8359 $203.7334
34+ $7.5747 $257.5398
45+ $6.7911 $305.5995
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