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Same model may have multiple batches, images only for reference.
IRFR9210PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9210PBF

Part No IRFR9210PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 1.9A DPAK
Datasheet
IRFR9210PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.9nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047106-IRFR9210PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR9210PBF CAD Model

Description

The MOSFET, with part number 1047106-IRFR9210PBF, is a P-Channel polarity power transistor from Vishay.

  • Supply and Demand: Sufficient
  • Power Dissipation: 2.5W (Ta), 25W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Rds On: 3 Ohm @ 1.1A, 10V
  • Continuous Drain Current: 1.9A (Tc) @ 25°C
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6088 $57.8360
235+ $0.4996 $117.4060
360+ $0.4839 $174.2040
495+ $0.4684 $231.8580
640+ $0.4528 $289.7920
855+ $0.4059 $347.0445
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Availability: 119,000 pieces
MOQ: 95 pcs
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