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Same model may have multiple batches, images only for reference.
IRFS11N50APBF Real Image
Same model may have multiple batches, images only for reference.

IRFS11N50APBF

Part No IRFS11N50APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 11A D2PAK
Datasheet
IRFS11N50APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 1423pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 128460-IRFS11N50APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS11N50APBF CAD Model

Description

The Vishay IRFS11N50APBF is a N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 500V and a continuous drain current of 11A at 25°C.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 11A @ 25°C
  • Maximum Rds On at Id,Vgs: 520 mOhm @ 6.6A, 10V
  • Maximum Gate Charge: 52nC @ 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: D2PAK package
  • Temperature Range: -55°C to 150°C (TJ)

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