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IRFU420APBF

Part No IRFU420APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3.3A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 340pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069612-IRFU420APBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU420APBF CAD Model

Description

The Vishay IRFU420APBF MOSFET is an N-channel power MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 3.3A. It has a low on-resistance of 3 Ohm @ 1.5A and 10V and is designed to operate in a temperature range of -55°C to 150°C. This MOSFET is packaged in a TO-251AA package with short leads and is suitable for through-hole mounting. It has a gate-source threshold voltage of 4.5V and a maximum gate charge of 17nC @ 10V. With limited supply and high demand, this MOSFET is a popular choice for power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9390 $61.0350
150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 740 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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