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IRFU430APBF

Part No IRFU430APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 1.7 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069614-IRFU430APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU430APBF CAD Model

Description

The Vishay MOSFET is a high-quality transistor that is designed to provide reliable and long-lasting performance. With a maximum power dissipation of 110W, this transistor is capable of handling a wide range of applications. It has a medium popularity rating and a balanced supply and demand status. This transistor is compliant with halogen-free standards and has a maximum gate-source voltage of ±30V. It is manufactured in a TO-251AA package and has a maximum Rds On @ Id, Vgs of 1.7 Ohm @ 3A, 10V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5879 $58.7900
240+ $0.4828 $115.8720
375+ $0.4678 $175.4250
515+ $0.4528 $233.1920
660+ $0.4377 $288.8820
885+ $0.3927 $347.5395
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,500 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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