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IRFZ10PBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ10PBF

Part No IRFZ10PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10A TO-220AB
Datasheet
IRFZ10PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047229-IRFZ10PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFZ10PBF CAD Model

Description

The Vishay IRFZ10PBF is a high-performance MOSFET with a maximum power dissipation of 43W (Tc) and a drain-source breakdown voltage of 60V.

  • Manufacturer: Vishay
  • Power Dissipation: 43W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 10A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 200 mOhm @ 6A, 10V
  • Mounting: Through-Hole
  • Package: TO-220AB
  • Applications: Power supplies, DC-DC converters, and high-performance filtering

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.2173 $65.1900
725+ $0.1785 $129.4125
1,130+ $0.1720 $194.3600
1,555+ $0.1669 $259.5295
2,000+ $0.1617 $323.4000
2,680+ $0.1449 $388.3320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 101,500 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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