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Same model may have multiple batches, images only for reference.
IRFZ48R Real Image
Same model may have multiple batches, images only for reference.

IRFZ48R

Part No IRFZ48R
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) | MOSFET N-CH 60V 50A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 50A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 18mOhm at 43A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 25V
Power Dissipation (Maximum) 190W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188206-IRFZ48R
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFZ48R CAD Model

Description

The IRFZ48R is an N-channel MOSFET transistor with a breakdown voltage of 60V.

  • Maximum Continuous Drain Current: 50A
  • Maximum Power Dissipation: 190W
  • TO-220AB Supplier Device Package: used
  • Operating Temperature Range: -55°C to 175°C
  • Gate-Source Voltage (th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 110nC @ 10V
  • Gate-Source Voltage (maximum): ±20V
  • Input Capacitance (Ciss) (maximum) @ Vds: 2400pF @ 25V
  • Category: discrete semiconductor products
  • Status: currently obsolete
  • Supply and Demand Status: sufficient
  • Manufacturer Pack Quantity: 1,000

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