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Same model may have multiple batches, images only for reference.
IRL510STRR Real Image
Same model may have multiple batches, images only for reference.

IRL510STRR

Part No IRL510STRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.6A D2PAK
Datasheet
IRL510STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.1nC @ 5V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.7W (Ta), 43W (Tc)
Maximum Rds On at Id,Vgs 540 mOhm @ 3.4A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047499-IRL510STRR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRL510STRR CAD Model

Description

The Vishay IRL510STRR is an N-channel MOSFET that has a maximum power dissipation of 3.7W (Ta) and 43W (Tc).

  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Use: Discrete semiconductor products
  • Lifecycle Status: Obsolete (EOL)
  • Popularity Rating: Medium
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 5.6A (Tc)
  • Package Quantity: 800

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