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IRL630STRRPBF

Part No IRL630STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 5.4A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040798-IRL630STRRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRL630STRRPBF CAD Model

Description

The Vishay IRL630STRRPBF is an N-channel MOSFET component that has a power dissipation of 3.1W (Ta), 74W (Tc).

  • Power Dissipation: 3.1W (Ta), 74W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 25V
  • Maximum Rds on at Id,Vgs: 400 mOhm @ 5.4A, 5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: D2PAK

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0212 $60.6360
70+ $1.6585 $116.0950
110+ $1.6066 $176.7260
150+ $1.5548 $233.2200
195+ $1.5030 $293.0850
260+ $1.3474 $350.3240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,800 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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