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Same model may have multiple batches, images only for reference.
IRL640STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRL640STRRPBF

Part No IRL640STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 17A D2PAK
Datasheet
IRL640STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 66nC @ 5V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 10A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205473-IRL640STRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL640STRRPBF CAD Model

Description

The Vishay IRL640STRRPBF is a medium popularity N-channel MOSFET used in various applications such as power supplies, motor control, and lighting.

  • Popularity: medium
  • Mounting: surface mount device
  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 17A
  • Maximum Rds On: 180mΩ @ 10A and 5V
  • RoHS Compliant: yes
  • Packaging: tape and reel

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Quantity Unit Price Ext. Price
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42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
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Availability: 2,560 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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