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Same model may have multiple batches, images only for reference.
IRLI630GPBF Real Image
Same model may have multiple batches, images only for reference.

IRLI630GPBF

Part No IRLI630GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 6.2A TO220FP
Datasheet
IRLI630GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 3.7A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1047557-IRLI630GPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLI630GPBF CAD Model

Description

The Vishay IRLI630GPBF is a MOSFET transistor.

  • Mounting: through-hole device with a TO-220-3 package
  • Designed for: use in discrete semiconductor products
  • Polarity: N-channel
  • Maximum Power Dissipation: 35W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 6.2A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 25V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On @ Id,Vgs: 400 mOhm @ 3.7A, 5V
  • Supply and Demand: sufficient

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