ON Semiconductor BC847BPDW1T2G Bipolar Transistor

The BC847BPDW1T2G is a high-quality bipolar (BJT) transistor component manufactured by ON Semiconductor, a leading supplier in the semiconductor industry. This product is designed for general-purpose switching and amplification applications, offering a compact and efficient solution for electronic circuits.

Key Features

• Transistor Type: NPN - Bipolar Junction Transistor (BJT)
• Configuration: Dual Series
• Package: SOT-363, SC-88, SC70-6
• Collector-Emitter Voltage (Vceo): 45V
• Collector-Base Voltage (Vcbo): 50V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 200mW
• DC Current Gain (hFE): 200 to 450 at 2mA, 5V
• Operating Temperature Range: -55°C to +150°C
• RoHS Compliant: Yes

The BC847BPDW1T2G transistor is widely recognized for its consistent performance and reliability. It's housed in a small SOT-363 package, which is ideal for space-constrained applications. The dual series configuration allows for flexibility in circuit design, making it a versatile choice for a variety of electronic projects.

Applications

Thanks to its general-purpose nature, the BC847BPDW1T2G can be used in a wide range of applications, including:

• Signal processing
• Amplification circuits
• Switching applications
• Power management
• Consumer electronics
• Telecommunications
• Computing systems

ON Semiconductor's commitment to quality ensures that each BC847BPDW1T2G transistor meets stringent standards for performance and durability. The device's RoHS compliance also means it meets environmental standards by avoiding the use of hazardous substances.

Whether you are designing a new circuit or seeking a replacement for an existing component, the BC847BPDW1T2G from ON Semiconductor offers a reliable and efficient solution that engineers and electronics enthusiasts can trust.