The Vishay SI1013X-T1-E3 is a P-channel MOSFET that features a drain-source breakdown voltage of 20V and a continuous drain current of 350mA @ 25°C.

• Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
• Maximum Rds On: 1.2 Ohm @ 350mA, 4.5V
• Maximum Gate-Source Voltage: ±6V
• Maximum Gate Charge: 1.5nC @ 4.5V
• Packaging: Reel - TR
• Mounting: Surface Mount Technology (SMT)
• Category: Discrete Semiconductor Products
• Power Dissipation (max): 250mW (Ta)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Case / Package: SC-89-3
• Dimension: SC-89, SOT-490
• Drain-Source Breakdown Voltage: 20V
• Drive Voltage: 1.8V, 4.5V
• Maximum Rds On: 1.2 Ohm @ 350mA, 4.5V
• Supply and Demand Status: Sufficient