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Same model may have multiple batches, images only for reference.
SI1013R-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1013R-T1-E3

Part No SI1013R-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 350MA SC-75A
Datasheet
SI1013R-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 1.5nC @ 4.5V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 350mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75A
Dimension SC-75A
Win Source Part Number 101976-SI1013R-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1013R-T1-E3 CAD Model

Description

The SI1013R-T1-E3 is a P-channel MOSFET manufactured by Vishay.

  • Packaging: Reel
  • Mountable: SMD (SMT)
  • Supply and Demand Status: Balanced
  • Designed for: Discrete Semiconductor Products
  • Maximum Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 350mA @ 25°C
  • Maximum Gate-Source Voltage: ±6V
  • Maximum Rds On: 1.2 Ohm @ 350mA, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1672 $58.5200
845+ $0.1372 $115.9340
1,305+ $0.1330 $173.5650
1,800+ $0.1287 $231.6600
2,325+ $0.1243 $288.9975
3,110+ $0.1115 $346.7650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,766 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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