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SI1016X-T1-GE3

Name: SI1016X-T1-GE3
Brand: Vishay
SKU: 320752
Availability: InStock
Rating: 4.85 (48 reviews)

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Part No	SI1016X-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N/P-CH 20V SC89-6 / Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R
Datasheet	SI1016X-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	485mA, 370mA
Maximum Rds On at Id,Vgs	700 mOhm @ 600mA, 4.5V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	0.75nC @ 4.5V
Maximum Power Dissipation	250mW
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SC-89-6
Win Source Part Number	028327-SI1016X-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Sufficient
Family Name	Si1016X
Introduction Date	February 08, 2001
ECCN	EAR99
Halogen Free	Compliant
Estimated EOL Date	Obsolete / End of life
Ultra Librarian 3D Model	Ultra Librarian SI1016X-T1-GE3 CAD Model

Alternative Products

Description

The Vishay Si1016X is a N and P-Channel FET designed for use in Discrete Semiconductor Products.

Feature: Logic Level Gate
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current: 485mA @ 25°C
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Rds On: 700 mOhm @ 600mA, 4.5V
Packaging: SC-89-6
Operating Temperature Range: -55°C to 150°C (TJ)
Popularity: High

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
50+	$1.0112	$50.5600
125+	$0.8297	$103.7125
190+	$0.8038	$152.7220
260+	$0.7778	$202.2280
335+	$0.7519	$251.8865
450+	$0.6741	$303.3450

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 30,733 pieces

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