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Same model may have multiple batches, images only for reference.
SI1073X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1073X-T1-E3

Part No SI1073X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI1073X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 980mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 173mOhm @ 980mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 265 pF @ 15 V
Power Dissipation (Max) 236mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-89 (SOT-563F)
Package / Case SOT-563, SOT-666
Base Product Number SI1073
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277496-SI1073X-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI1073X-T1-E3 CAD Model

Description

The Vishay SI1073X-T1-E3 is a P-Channel MOSFET that comes in a SOT-563, SOT-666 package.

  • Mounting: SMD (SMT)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 980mA (Ta)
  • Rds On (Max) @ Id, Vgs: 173mOhm @ 980mA, 10V
  • Power Dissipation (Max): 236mW (Ta)
  • Popularity: Popular
  • Supply/Demand Status: Sufficient
  • Temperature Range: -55°C to 150°C (TJ)

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