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Same model may have multiple batches, images only for reference.
SI1307DL-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1307DL-T1-E3

Part No SI1307DL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 0.85A SOT323-3
Datasheet
SI1307DL-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 5nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 290mW (Ta)
Maximum Rds On at Id,Vgs 290 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 107918-SI1307DL-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1307DL-T1-E3 CAD Model

Description

The Vishay SI1307DL-T1-E3 is a P-Channel MOSFET with a Drain-Source Breakdown Voltage of 12V and a Continuous Drain Current of 850mA at 25°C.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 850mA
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate Charge: 5nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 290 mOhm @ 1A, 4.5V
  • Applications: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
120+ $0.4966 $59.5920
285+ $0.4075 $116.1375
440+ $0.3948 $173.7120
605+ $0.3820 $231.1100
785+ $0.3693 $289.9005
1,050+ $0.3310 $347.5500
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Availability: 7,200 pieces
MOQ: 120 pcs
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