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SI1404BDH-T1-E3

Name: SI1404BDH-T1-E3
Brand: Vishay
SKU: 320853
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI1404BDH-T1-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 1.9A SOT363
Datasheet	SI1404BDH-T1-E3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	1.9A (Ta), 2.37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Gate-Source Threshold Voltage	1.3V @ 250μA
Max Gate Charge	2.7nC @ 4.5V
Max Input Capacitance	100pF @ 15V
Maximum Gate-Source Voltage	±12V
Power Dissipation (Max)	1.32W (Ta), 2.28W (Tc)
Maximum Rds On at Id,Vgs	238 mOhm @ 1.9A, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SC-70-6 (SOT-363)
Dimension	6-TSSOP, SC-88, SOT-363
Win Source Part Number	064381-SI1404BDH-T1-E3
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SI1404BDH-T1-E3 CAD Model

Alternative Products

Description

The Vishay SI1404BDH-T1-E3 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 30V
Maximum Continuous Drain Current: 1.9A
Maximum Gate-Source Voltage: ±12V
Maximum Rds On: 238 mOhm @ 1.9A and 4.5V
Gate-Source Threshold Voltage: 1.3V @ 250μA
Maximum Gate Charge: 2.7nC @ 4.5V
Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 1.32W (Ta) and 2.28W (Tc)
Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
850+	$0.0681	$57.8850
2,085+	$0.0554	$115.5090
3,195+	$0.0543	$173.4885
4,445+	$0.0520	$231.1400
5,685+	$0.0508	$288.7980
7,695+	$0.0450	$346.2750

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,066 pieces

MOQ: 850 pcs

Order Increment : 1 pcs

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SI4563DY-T1-E3

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