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Same model may have multiple batches, images only for reference.
SI1407DL-T1-E3
Same model may have multiple batches, images only for reference.

SI1407DL-T1-E3

Part No SI1407DL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFETs 12V 1.8A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-363-6
Continuous Drain Current (ID) 1.6 A
Drain to Source Breakdown Voltage 12 V
Drain to Source Resistance 130 mΩ
Drain to Source Voltage (Vdss) -12 V
Element Configuration Single
Fall Time 33 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 568 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 6
Power Dissipation 568 mW
Rise Time 33 ns
RoHS Compliant
Turn-Off Delay Time 32 ns
Win Source Part Number 990570-SI1407DL-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI1407DL-T1-E3 CAD Model

Description

Vishay's SI1407DL-T1-E3 is a single-element transistor with a drain to source voltage (Vdss) of -12 V.

  • Supply and Demand Status: Shortage
  • Maximum Operating Temperature: 150 °C
  • Power Dissipation: 568 mW
  • Continuous Drain Current (ID): 1.6 A
  • Drain to Source Breakdown Voltage: 12 V
  • Turn-Off Delay Time: 32 ns
  • Drain to Source Resistance: 130 mΩ
  • Rise and Fall Time: 33 ns
  • Gate to Source Voltage (Vgs): 8 V

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