The SI1410EDH-T1-GE3 is a P-Channel 30 V MOSFET from Vishay. This device is designed for load switching and power management applications where high efficiency and small size are critical. The device is available in a PowerPAK® SC-70 package.
Applications
- Load Switching
- Battery Management Systems
- DC-DC Converters
- Power Management in Portable Devices
- High-Efficiency Power Switching
Features
- P-Channel MOSFET
- Low On-Resistance: RDS(on) = 0.045 Ω at VGS = -10 V
- Low Threshold Voltage: VGS(th) = -1.5 V (Typical)
- Fast Switching Speed
- Small Footprint: PowerPAK® SC-70 Package
- Halogen-free According to IEC 61249-2-21 Definition
Benefits
- High Efficiency: The low on-resistance minimizes power loss during switching, resulting in increased energy efficiency.
- Extended Battery Life: Low threshold voltage and gate charge make it suitable for battery-powered devices, prolonging battery life.
- Compact Design: The PowerPAK® SC-70 package allows for high-density board layouts in space-constrained applications.
- Simplified Design: Low threshold voltage simplifies the gate drive requirements, reducing component count and cost.
- Environmentally Friendly: The halogen-free construction complies with environmental standards.
Technical Specifications
- Polarity: P-Channel
- Maximum Drain-Source Voltage (VDS): -30 V
- Gate-Source Voltage (VGS): ±20 V
- Continuous Drain Current (ID): -6.3 A
- Pulsed Drain Current (IDM): -25 A
- Total Power Dissipation (PD): 2.5 W
- Operating Temperature: -55 °C to +150 °C
- Package: PowerPAK® SC-70
The Vishay SI1410EDH-T1-GE3 P-Channel MOSFET is designed for high-efficiency power management in a compact form factor. Its low on-resistance, fast switching speed, and small package make it an ideal solution for a range of portable and power-sensitive applications.