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Same model may have multiple batches, images only for reference.
SI1410EDH-T1 Real Image
Same model may have multiple batches, images only for reference.

SI1410EDH-T1

Part No SI1410EDH-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 2.9A 6-Pin SC-70
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-363-6
Continuous Drain Current (ID) 3.7 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 70 mΩ
Drain to Source Voltage (Vdss) 20 V
Element Configuration Single
Fall Time 400 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.56 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Pins 6
Power Dissipation 1.56 W
Rise Time 400 ns
RoHS Non-Compliant
Turn-Off Delay Time 1.9 µs
Turn-On Delay Time 150 ns
Weight 7.512624 mg
Win Source Part Number 1092773-SI1410EDH-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI1410EDH-T1 CAD Model

Description

The SI1410EDH-T1 is an N-channel MOSFET transistor manufactured by Vishay.

  • Vdss: 20 V
  • Power Dissipation: 1.56 W
  • Weight: 7.512624 mg
  • Rise and Fall Time: 400 ns
  • Case/Package: SOT-363-6
  • RoHS Compliant: No
  • Configuration: Single Element
  • Maximum Power Dissipation: 1.56 W
  • Turn-On Delay Time: 150 ns
  • Continuous Drain Current (ID): 3.7 A
  • Drain to Source Breakdown Voltage: 20 V
  • Turn-Off Delay Time: 1.9 µs
  • Drain to Source Resistance: 70 mΩ
  • Gate to Source Voltage (Vgs): 12 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,180 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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