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Same model may have multiple batches, images only for reference.
SI1473DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1473DH-T1-GE3

Part No SI1473DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.7A SC-70-6
Datasheet
SI1473DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 6.2nC @ 4.5V
Max Input Capacitance 365pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 2.78W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095699-SI1473DH-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1473DH-T1-GE3 CAD Model

Description

The Vishay SI1473DH-T1-GE3 is a P-Channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current @ 25°C of 2.7A (Tc).

  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 2A, 10V
  • Gate-Source Threshold Voltage @ 250μA: 3V
  • Max Gate Charge @ 4.5V: 6.2nC
  • Max Input Capacitance @ 15V: 365pF
  • Package: SC-70-6 (SOT-363)
  • Mounting: SMD (SMT) technology
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Market Status: active
  • Supply and Demand: sufficient

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