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Same model may have multiple batches, images only for reference.
SI1563EDH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1563EDH-T1-GE3

Part No SI1563EDH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 1.13A SC70-6
Datasheet
SI1563EDH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.13A, 880mA
Maximum Rds On at Id,Vgs 280 mOhm @ 1.13A, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Gate Charge 1nC @ 4.5V
Maximum Power Dissipation 570mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 1095707-SI1563EDH-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1563EDH-T1-GE3 CAD Model

Description

The Vishay Si1563EDH-T1-GE3 is a N and P-Channel FET that features a logic level gate.

  • Applications: Discrete Semiconductor Products
  • Status: Obsolete
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: SC-70-6 (SOT-363)
  • Maximum Power Dissipation: 570mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.13A and 880mA @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Maximum Gate Charge: 1nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 1.13A, 4.5V
  • Supply and Demand Status: Sufficient

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