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IRFU9N20D

Part No IRFU9N20D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.4A I-PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 86W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040393-IRFU9N20D
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFU9N20D CAD Model

Description

The Infineon Technologies IRFU9N20D is a N-Channel MOSFET designed for use in various electronic circuits.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current (at 25°C): 9.4A
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Gate Charge (Max): 27nC @ 10V
  • Input Capacitance (Max): 560pF @ 25V
  • Rds On (Max) at Id, Vgs: 380 mOhm @ 5.6A, 10V
  • Package: IPAK (TO-251)
  • Mounting Type: Through-Hole
  • Applications: Power Supplies, Motor Control Circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0909 $54.5450
115+ $0.8951 $102.9365
175+ $0.8672 $151.7600
240+ $0.8392 $201.4080
310+ $0.8112 $251.4720
415+ $0.7273 $301.8295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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