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AUIRF4104STRL

Part No AUIRF4104STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A D2PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 5.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567104-AUIRF4104STRL
Ultra Librarian 3D Model Ultra Librarian AUIRF4104STRL CAD Model

Description

The AUIRF4104STRL is an N-Channel MOSFET transistor from the HEXFET™ series by Infineon Technologies. Infineon Technologies

  • Function: Discrete semiconductor applications
  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 75A @ 25°C (Tc)
  • Rds On (Max): 5.5mOhm @ 75A and 10V
  • Gate Threshold Voltage: 4V @ 250μA
  • Power Dissipation (Max): 140W (Tc)
  • Mounting Type: Surface Mountable
  • Package: TO-263-3
  • Gate Charge: 100nC @ 10V
  • Input Capacitance: 3000pF @ 25V
  • Operating Temperature Range: -55°C to 175°C
  • Product Status: Not for new designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9250 $50.8750
135+ $0.7590 $102.4650
205+ $0.7353 $150.7365
285+ $0.7116 $202.8060
365+ $0.6879 $251.0835
490+ $0.6167 $302.1830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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