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Same model may have multiple batches, images only for reference.
IRFU2905ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFU2905ZPBF

Part No IRFU2905ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A I-PAK
Datasheet
IRFU2905ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 14.5 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047205-IRFU2905ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU2905ZPBF CAD Model

Description

The Infineon Technologies IRFU2905ZPBF MOSFET is a N-channel polarity, through-hole device with a drain-source breakdown voltage of 55V and a continuous drain current of 42A @ 25°C.

  • Polarity: N-channel
  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A @ 25°C
  • Power Dissipation: 110W (Tc)
  • Maximum Rds On: 14.5 mOhm @ Id,Vgs of 36A, 10V
  • Package: IPAK (TO-251)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1380pF @ 25V

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Quantity Unit Price Ext. Price
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16+ $7.2857 $116.5712
25+ $7.0582 $176.4550
34+ $6.8295 $232.2030
44+ $6.6020 $290.4880
59+ $5.9194 $349.2446
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Availability: 26,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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