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SI1900DL-T1-GE3

Part No SI1900DL-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2 N-CH 30V SC70-6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Transistor Polarity 2 N-Channel (Dual)
FET Feature Standard
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 630mA, 590mA
Rds On (Maximum) at Id, Vgs 480mOhm at 590mA, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 1.4nC at 10V
Maximum Power 300mW, 270mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 756534-SI1900DL-T1-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1900DL-T1-GE3 CAD Model

Description

The Vishay Siliconix 756534-SI1900DL-T1-GE3 is a standard FET transistor with 2 N-Channel (Dual) polarity.

  • Power: 300mW, 270mW
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 630mA, 590mA
  • Rds On (Maximum) @ Id, Vgs: 480mOhm @ 590mA, 10V
  • Gate source voltage(th) (Maximum) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: -
  • Operating Temperature: -55°C ~ 150°C
  • Package: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.3053 $58.0070
465+ $0.2506 $116.5290
715+ $0.2427 $173.5305
985+ $0.2349 $231.3765
1,275+ $0.2271 $289.5525
1,705+ $0.2035 $346.9675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,431 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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