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SI1901DL-T1

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Part No	SI1901DL-T1
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFETs 20V 0.18A
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting	SMD (SMT)
Case / Package	SOT-363
Continuous Drain Current (ID)	-180 mA
Drain to Source Breakdown Voltage	-20 V
Drain to Source Resistance	3.8 Ω
Element Configuration	Dual
Fall Time	25 ns
Gate to Source Voltage (Vgs)	8 V
Maximum Operating Temperature	150 °C
Min Operating Temperature	-55 °C
Power Dissipation	200 mW
Rise Time	25 ns
RoHS	Non-Compliant
Turn-Off Delay Time	19 ns
Win Source Part Number	1092775-SI1901DL-T1
Categories	Transistors - FETs, MOSFETs - RF
Manufacturer	Vishay
Popularity	Low
Supply and Demand Status	Shortage
Ultra Librarian 3D Model	Ultra Librarian SI1901DL-T1 CAD Model

Alternative Products

Description

The 1092775-SI1901DL-T1 is a transistor - FETs, MOSFETs - RF with a mounting of SMD (SMT) from Vishay.

Mounting: SMD (SMT)
Power Dissipation: 200 mW
Rise and Fall Time: 25 ns
Supply: Short supply
Maximum Operating Temperature: 150 °C
RoHS Compliant: No
Minimum Operating Temperature: -55 °C
Configuration: Dual Element
Continuous Drain Current (ID): -180 mA
Drain to Source Breakdown Voltage: -20 V
Turn-Off Delay Time: 19 ns
Drain to Source Resistance: 3.8 Ω
Gate to Source Voltage (Vgs): 8 V

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