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SI1902CDL-T1-GE3 Real Image SI1902CDL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI1902CDL-T1-GE3 Real Image SI1902CDL-T1-GE3 Real Image
SI1902CDL-T1-GE3 Real Image SI1902CDL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1902CDL-T1-GE3

Part No SI1902CDL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.1A SC-70-6
Datasheet
SI1902CDL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.1A
Maximum Rds On at Id,Vgs 235 mOhm @ 1A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 3nC @ 10V
Max Input Capacitance 62pF @ 10V
Maximum Power Dissipation 420mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 046856-SI1902CDL-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1902CDL-T1-GE3 CAD Model

Description

This dual N-Channel FET electronic component is manufactured by Vishay and has a Win Source Part Number of 046856-SI1902CDL-T1-GE3.

  • Supply and Demand Status: Limited
  • Gate Type: Logic Level
  • Package: SC-70-6 (SOT-363)
  • Maximum Power Dissipation: 420mW
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 235 mOhm @ 1A, 4.5V
  • Technical Support: Available upon request

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1626 $50.4060
660+ $0.1524 $100.5840
1,020+ $0.1472 $150.1440
1,465+ $0.1369 $200.5585
1,900+ $0.1318 $250.4200
2,370+ $0.1266 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 310 pcs
Order Increment : 1 pcs
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