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SI2300DS-T1-GE3

Part No SI2300DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 3.6A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 320pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.1W (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs 68 mOhm @ 2.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028357-SI2300DS-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management, Portable Devices
Family Name Si2300DS
Introduction Date January 26, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI2300DS-T1-GE3 CAD Model

Description

The SI2300DS-T1-GE3 is an N-channel MOSFET from Vishay.

  • Maximum Drain-Source Voltage: 30V
  • Maximum Continuous Drain Current: 3.6A
  • On-Resistance: 68mΩ
  • Gate Threshold Voltage: 1.5V
  • Package: SOT-23-3
  • Power Supply: 2.5V to 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2007 $50.1750
610+ $0.1647 $100.4670
945+ $0.1595 $150.7275
1,300+ $0.1544 $200.7200
1,680+ $0.1492 $250.6560
2,245+ $0.1338 $300.3810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 104,473 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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