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Same model may have multiple batches, images only for reference.
SI2301ADS-T1-E3
Same model may have multiple batches, images only for reference.

SI2301ADS-T1-E3

Part No SI2301ADS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 20V 2.0A 0.9W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-23-3
Continuous Drain Current (ID) 2 A
Drain to Source Resistance 130 mΩ
Drain to Source Voltage (Vdss) -20 V
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 900 mW
Min Operating Temperature -55 °C
Number of Channels 1
Number of Pins 3
Power Dissipation 900 mW
Rise Time 30 ns
RoHS Compliant
Turn-Off Delay Time 25 ns
Turn-On Delay Time 6 ns
Weight 1.437803 g
Win Source Part Number 965297-SI2301ADS-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI2301ADS-T1-E3 CAD Model

Description

The SI2301ADS-T1-E3 is a single channel MOSFET transistor from Vishay that is designed for use in RF applications.

  • Drain to Source Voltage: -20 V
  • Power Dissipation: 900 mW
  • Weight: 1.437803 g
  • Rise Time: 30 ns
  • Fall Time: 30 ns
  • Case/Package: SOT-23-3
  • Operating Temperature: -55 °C and 150 °C
  • Maximum Power Dissipation: 900 mW
  • Continuous Drain Current: 2 A
  • Turn-On Delay Time: 6 ns
  • Turn-Off Delay Time: 25 ns
  • Drain to Source Resistance: 130 mΩ
  • Gate to Source Voltage: 8 V
  • RoHS Compliant: Yes
  • Supply: Short Supply

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