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SI2302CDS-T1-GE3

Part No SI2302CDS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.6A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 850mV @ 250μA
Max Gate Charge 5.5nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 710mW (Ta)
Maximum Rds On at Id,Vgs 57 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028363-SI2302CDS-T1-GE3
Family Name Si2302CDS
Introduction Date July 29, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SI2302CDS-T1-GE3 CAD Model

Description

The Si2302CDS-T1-GE3 is an N-Channel MOSFET transistor that is suitable for use in a wide range of applications manufactured by Vishay.

  • Power Dissipation: 710mW @ -55°C to 150°C
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.6A @ 25°C
  • Gate-Source Threshold Voltage: 850mV @ 250μA
  • Maximum Gate Charge: 5.5nC @ 4.5V
  • Package: SOT-23-3 (TO-236)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,250+ $0.0401 $50.1250
2,660+ $0.0376 $100.0160
4,135+ $0.0363 $150.1005
5,920+ $0.0338 $200.0960
7,695+ $0.0325 $250.0875
9,585+ $0.0313 $300.0105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 552,000 pieces
MOQ: 1250 pcs
Order Increment : 1 pcs
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