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SI2306BDS-T1-E3

Part No SI2306BDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.16A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 4.5nC @ 5V
Max Input Capacitance 305pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 47 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028371-SI2306BDS-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI2306BDS-T1-E3 CAD Model

Description

The SI2306BDS-T1-E3 is a discrete semiconductor product manufactured by Vishay.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Technology: N-Channel MOSFET
  • Maximum Power Dissipation: 750mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.16A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 4.5nC @ 5V
  • Maximum Input Capacitance: 305pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 47 mOhm @ 3.5A, 10V
  • Application: Industrial Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3813 $51.4755
320+ $0.3128 $100.0960
495+ $0.3031 $150.0345
685+ $0.2933 $200.9105
885+ $0.2835 $250.8975
1,185+ $0.2542 $301.2270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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