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Same model may have multiple batches, images only for reference.
SI2315BDS Vishay
Same model may have multiple batches, images only for reference.

SI2315BDS

Part No SI2315BDS
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 3A SOT23-3
Datasheet
SI2315BDS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 715pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 50 mOhm @ 3.85A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 321039-SI2315BDS
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2315BDS CAD Model

Description

The Vishay SI2315BDS is a P-channel MOSFET with a maximum power dissipation of 750mW @ Ta.

  • Package: SMD
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 3A
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Popularity: High
  • Supply and Demand Status: Balanced
  • Alternative Parts: IRLML6401TRPBF and the Si2315BDS-T1-E3

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2691 $57.8565
525+ $0.2218 $116.4450
810+ $0.2148 $173.9880
1,115+ $0.2079 $231.8085
1,440+ $0.2010 $289.4400
1,925+ $0.1802 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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