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SI2337DS-T1-E3 Real Image SI2337DS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI2337DS-T1-E3 Real Image SI2337DS-T1-E3 Real Image
SI2337DS-T1-E3 Real Image SI2337DS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2337DS-T1-E3

Part No SI2337DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 80V 2.2A SOT23-3
Datasheet
SI2337DS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 500pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 760mW (Ta), 2.5W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 1.2A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095750-SI2337DS-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2337DS-T1-E3 CAD Model

Description

The Vishay SI2337DS-T1-E3 is a P-channel MOSFET designed for use in a wide range of applications, including power management, motor control, and battery charging.

  • On-Resistance: 270 mOhm
  • Maximum Drain-Source Voltage: 80V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7547 $52.8290
145+ $0.7069 $102.5005
220+ $0.6830 $150.2600
315+ $0.6353 $200.1195
410+ $0.6114 $250.6740
515+ $0.5875 $302.5625
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Availability: 33,000 pieces
MOQ: 70 pcs
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