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SI2338DS-T1-GE3

Part No SI2338DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 424pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 189613-SI2338DS-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si2338DS
Introduction Date June 10, 2011
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian SI2338DS-T1-GE3 CAD Model

Description

The SI2338DS-T1-GE3 is an N-channel MOSFET electronic component manufactured by Vishay.

  • Mounting: Surface-mount device
  • Case/Package: SOT-23
  • Status: Active
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Application: High-current applications
  • Continuous Drain Current: 6A @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 1.3W (Ta), 2.5W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3263 $50.5765
375+ $0.2678 $100.4250
580+ $0.2594 $150.4520
800+ $0.2510 $200.8000
1,035+ $0.2427 $251.1945
1,380+ $0.2176 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 139,240 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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