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SI2369BDS-T1-GE3

Part No SI2369BDS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V
Vgs (Max) +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds 745 pF @ 15 V
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SI2369
Other Names 742-SI2369BDS-T1-GE3DKR,742-SI2369BDS-T1-GE3TR,742-SI2369BDS-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277612-SI2369BDS-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI2369BDS-T1-GE3 CAD Model

Description

The Vishay SI2369BDS-T1-GE3 is a P-Channel MOSFET transistor with a maximum drain to source voltage of 30V.

  • Continuous Drain Current: 5.6A (Ta), 7.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
  • Ideal for: discrete semiconductor products
  • Case/Package: TO-236-3, SC-59, SOT-23-3
  • Mounting: SMD (SMT)
  • Operating Temperature Range: from -55°C to 150°C (TJ)
  • Packaging: tape & reel
  • Supply: limited supply

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3959 $51.4670
310+ $0.3248 $100.6880
480+ $0.3147 $151.0560
660+ $0.3045 $200.9700
850+ $0.2944 $250.2400
1,140+ $0.2639 $300.8460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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