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SI3424DV-T1-GE3

Name: SI3424DV-T1-GE3
Brand: Vishay
SKU: 512564
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI3424DV-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 5A 6-TSOP
Datasheet	SI3424DV-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	800mV @ 250μA (Min)
Max Gate Charge	18nC @ 10V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	1.14W (Ta)
Maximum Rds On at Id,Vgs	28 mOhm @ 6.7A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	6-TSOP
Dimension	SOT-23-6 Thin, TSOT-23-6
Win Source Part Number	1095822-SI3424DV-T1-GE3
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian SI3424DV-T1-GE3 CAD Model

Alternative Products

Description

The Vishay SI3424DV-T1-GE3 is a N-channel MOSFET designed for use in a variety of applications.

Maximum Power Dissipation: 1.14W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current @ 25°C: 5A
Gate-Source Threshold Voltage: 800mV @ 250μA (Min)
Maximum Gate Charge: 18nC @ 10V
Maximum Rds On @ Id,Vgs: 28 mOhm @ 6.7A, 10V
Package: 6-TSOP case
Mounting: SMD (SMT)
Operating Temperature: -55°C to 150°C (TJ)
Lifecycle Status: Obsolete (EOL)
Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
250+	$0.2356	$58.9000
600+	$0.1940	$116.4000
930+	$0.1871	$174.0030
1,275+	$0.1813	$231.1575
1,645+	$0.1756	$288.8620
2,210+	$0.1571	$347.1910

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,000 pieces

MOQ: 250 pcs

Order Increment : 1 pcs

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