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Same model may have multiple batches, images only for reference.
SI3435DV-T1
Same model may have multiple batches, images only for reference.

SI3435DV-T1

Part No SI3435DV-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 12V 4.8A 2W
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 4.8 A
Drain to Source Breakdown Voltage 12 V
Drain to Source Resistance 73 mΩ
Element Configuration Single
Fall Time 45 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 6
Power Dissipation 1.1 W
Rise Time 45 ns
RoHS Non-Compliant
Turn-Off Delay Time 90 ns
Win Source Part Number 964707-SI3435DV-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3435DV-T1 CAD Model

Description

The SI3435DV-T1 is a single element transistor with a power dissipation of 1.1W and 6 number of pins.

  • Rise Time: 45 ns
  • Fall Time: 45 ns
  • Case/Package: TSOP
  • Maximum Operating Temperature: 150°C
  • Win Source Part Number: 964707-SI3435DV-T1

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5058 $58.1670
280+ $0.4151 $116.2280
435+ $0.4021 $174.9135
595+ $0.3892 $231.5740
770+ $0.3762 $289.6740
1,030+ $0.3373 $347.4190
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Availability: 12,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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