The Vishay SI3441BDV-T1-GE3 is a P-channel MOSFET with a drain-source breakdown voltage of 20V.

• Drain-Source Breakdown Voltage: 20V
• Maximum Rds on: 90 mOhm @ 3.3A and 4.5V
• Gate-Source Threshold Voltage: 850mV @ 250μA
• Maximum Gate-Source Voltage: ±8V
• Max Gate Charge: 8nC @ 4.5V
• Power Dissipation (Max): 860mW (Ta)
• Suitable For: Use in discrete semiconductor products
• Drive Voltage (max Rds on, min Rds on): 2.5V and 4.5V
• Operating Temperature Range: from -55°C to 150°C (TJ)
• Package: 6-TSOP
• Package Dimensions: SOT-23-6 Thin and TSOT-23-6
• Supply and Demand Status: Sufficient