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Same model may have multiple batches, images only for reference.
SI3442BDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3442BDV-T1-GE3

Part No SI3442BDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3A 6-TSOP
Datasheet
SI3442BDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 5nC @ 4.5V
Max Input Capacitance 295pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 860mW (Ta)
Maximum Rds On at Id,Vgs 57 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 042592-SI3442BDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3442BDV-T1-GE3 CAD Model

Description

The Vishay 042592-SI3442BDV-T1-GE3 is a medium-popularity electronic component with a balanced supply and demand status.

  • Component: MOSFET transistor
  • Power Dissipation: 860 mW
  • Continuous Drain Current @ 25°C: 3 A
  • Rds On Value: 57 mOhm @ 4A and 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Gate-Source Threshold Voltage: 1.8V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3448 $58.6160
410+ $0.2830 $116.0300
635+ $0.2741 $174.0535
875+ $0.2653 $232.1375
1,130+ $0.2564 $289.7320
1,510+ $0.2298 $346.9980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,150 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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