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Same model may have multiple batches, images only for reference.
SI3443CDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3443CDV-T1-E3

Part No SI3443CDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.97A 6TSOP
Datasheet
SI3443CDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 12.4nC @ 5V
Max Input Capacitance 610pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2W (Ta), 3.2W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064444-SI3443CDV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3443CDV-T1-E3 CAD Model

Description

The Vishay SI3443CDV-T1-E3 is a P-channel MOSFET that is designed to operate in a temperature range of -55°C to 150°C.

  • Power Dissipation Rating: 2W (Ta), 3.2W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Mounting: surface mountable
  • Package: 6-TSOP
  • Category: discrete semiconductor products
  • Popularity Rating: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2151 $50.5485
570+ $0.1765 $100.6050
880+ $0.1710 $150.4800
1,210+ $0.1655 $200.2550
1,565+ $0.1600 $250.4000
2,095+ $0.1434 $300.4230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,330 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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